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  • More on the AMD Bulldozer
  • 3 bits / cell from Samsung
  • DDR MLC Flash NAND from Samsung
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     More on the AMD Bulldozer
      Posted on 01/12/2009 at 11:55 by Marc
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    AnandTech have managed to get some new info on Bulldozer architecture, and more especially on the implications of the integration of two integer cores (see this news).


    First of all, building in this second core is reported to be costly in terms of transistors as it will necessitate a 50% increase in die area. Obviously this is less than doubling the size of the die, which is what you need to double everything, but a good deal more than HyperThreading that only requires a 5% increase.
    Secondly, according to AMD the performance benefits of this second module will be high – it believes 80% of normal server workload is integer operations. Good news then.

    All this will have an impact on how AMD counts cores. AMD considers Bulldozer to be made up of two cores as it is made up of two integer blocks (and this even if there is just a single floating point core). We do understand the reasoning behind this, but we reserve our judgement as to the practical impact for a later date.



     3 bits / cell from Samsung
      Posted on 01/12/2009 at 08:56 by Marc
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    Following Toshiba and IM Flash Technologies (Micron / Intel), it’s over to Samsung to announce its Flash NAND MLC at 3 bits per cell (MLC 3PBC). The manufacturer says that it has started mass production of these chips engraved at 30nm. Remember, this type of memory is only for USB keys and memory cards, performance and endurance being insufficient for an SSD.




     DDR MLC Flash NAND from Samsung
      Posted on 01/12/2009 at 08:48 by Marc
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    Samsung have just announced that they have begun production of a 4 GB MLC Flash NAND chip engraved at 30nm, its specificity being its DDR type interface. This chip comes 8 months after Samsung’s first 30nm MLC chip, although there have been performance problems with these which means they haven’t been used on SSDs. According to Samsung, these new DDR MLC Flash NAND chips will offer speeds 3 times as fast as SDR chips.



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