Samsung: 256 MB of DDR3 in a 50nm version Posted on 29/09/2008 at 16:25 by Marc
- source: Samsung
Samsung has just announced that it has produced a 256 MB (2 Gbits) DDR3 chip. A 50 nm version, the chip will be an improvement on previous 2 Gbit solutions which in fact combined two 1Gbit dies within the same chip.
Power consumption is stated as being down by 40%, making these chips a possible solution in terms of 4 GB DIMM or SODIMM slots, or 8 GB Registered modules and even 16 GB by using two dies in one chip. In terms of frequency these chips will be able to maintain DDR3-1300 at 1.5 or 1.35V. Mass production should begin at the start of 2009.
Samsung has just announced that it has produced a 256 MB (2 Gbits) DDR3 chip. A 50 nm version, the chip will be an improvement on previous 2 Gbit solutions which in fact combined two 1Gbit dies within the same chip.